SPB10N10L G

SPB10N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 V RDS(on) 154 m
ID 10.3 A P-TO263-3-2 Type Package Ordering Code Marking SPB10N10L P-TO263-3-2 Q67042-S4164 10N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC=25°C 10.3 TC=100°C 8.1 Pulsed drain current ID puls Unit 42.2 TC=25°C EAS 60 mJ dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 50 W -55... +175 °C Avalanche energy, single pulse ID =10.3 A , VDD =25V, RGS =25
Reverse diode dv/dt IS =10.3A, VDS =80V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2005-02-14 SPB10N10L Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID = 21 µA Zero gate voltage drain current µA IDSS VDS =100V, VGS =0V, Tj =25°C - 0.01 1 VDS =100V, VGS =0V, Tj =125°C - 1 100 IGSS - 1 100 nA RDS(on) - 169 210 m
RDS(on) - 124 154 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=8.1A Drain-source on-state resistance VGS =10V, ID =8.1A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2005-02-14 SPB10N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 4.7 9.4 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =8.1A Input capacitance Ciss VGS =0V, VDS =25V, - 355 444 Output capacitance Coss f=1MHz - 72 90 Reverse transfer capacitance Crss - 42 63 Turn-on delay time td(on) - 4.6 6.9 Rise time tr - 19.1 28.7 Turn-off delay time td(off) - 27.8 41.7 Fall time tf - 17.8 26.7 - 1.1 1.4 - 7.3 11 - 17.7 22 V(plateau) VDD =80V, ID=10.3A - 3.8 - V IS - - 10.3 A - - 42.2 VDD =50V, VGS=10V, ID =10.3A, RG =13
ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =10.3A VDD =80V, ID =10.3A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =10.3A - 0.93 1.25 V Reverse recovery time trr VR =50V, IF =lS , - 57 71 ns Reverse recovery charge Qrr diF /dt=100A/µs - 126 158 nC Page 3 2005-02-14 SPB10N10L 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 55 parameter: VGS  10 V SPP10N10L 12 A W 10 45 9 40 8 35 ID Ptot SPP10N10L 7 30 6 25 5 20 4 15 3 10 2 5 1 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 2 SPP10N10L K/W tp = 4.8µs /I D A SPP10N10L 10 0 Z thJC DS ( R ID 10 1 on ) = V DS 10 µs 10 -1 100 µs D = 0.50 10 10 -2 0.20 1 ms 0 0.10 0.05 single pulse 10 ms DC 0.02 10 -3 0.01 10 -1 0 10 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2005-02-14 SPB10N10L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 25 500 m
5.5V 400 4.7V RDS(on) A 5V 6V 7V 10V ID 4.5V 15 350 4.5V 300 4.7V 5V 250 10 200 150 5 5.5V 6V 7V 10V 100 50 0 0 2 4 6 8 V 10 0 0 14 2.5 5 7.5 A 10 12.5 15 17.5 20 25 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 10 16 S A 8 12 g fs ID 7 10 6 5 8 4 6 3 4 2 2 0 0 1 1 2 3 V 5 0 0 2 4 6 8 A 11 ID VGS Page 5 2005-02-14 SPB10N10L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 8.1 A, VGS = 10 V parameter: VGS = VDS 700 SPP10N10L 2.4
V 600 ID=1mA VGS(th) RDS(on) 550 500 450 2 1.8 400 1.6 350 300 1.4 250 98% 200 1.2 150 ID=21µA typ 100 1 50 0 -60 -20 20 60 100 °C 140 0.8 -60 200 -20 20 60 100 Tj °C 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 Ciss pF SPP10N10L A Coss 10 1 C IF 10 2 Crss 10 1 10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 0 0 5 10 15 20 30 V 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2005-02-14 SPB10N10L 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 10.3 A , VDD = 25 V, RGS = 25
parameter: ID = 10.3 A pulsed 60 16 SPP10N10L mJ V 50 12 40 VGS EAS 45 35 10 20V 30 8 50V 80V 25 6 20 15 4 10 2 5 0 25 45 65 85 105 125 145 °C 185 0 0 4 8 12 16 20 nC 28 QGate Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 120 SPP10N10L V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2005-02-14 SPB10N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2005-02-14